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Journal of Crystal Growth

Volumn 285, Issue 1-2, 2005, Pages 103-110

Properties of ferroelectric SrBi2Ta2O 9-Bi4Ti3O12 thin films derived by the sol-gel method

(2) Wang, Xusheng a,b Ishiwara, Hiroshi b

a TONGJI UNIVERSITY (China)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

A1. Crystal structure; A3. Thin film; B2. Ferroelectric materials

Indexed keywords

COERCIVE FORCE; COMPOSITION; CRYSTAL STRUCTURE; CURRENT DENSITY; FABRICATION; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; PERMITTIVITY; SOL-GELS; STRONTIUM COMPOUNDS;

COERCIVE FIELDS; LEAKAGE CURRENT DENSITIES; REMNANT POLARIZATION;

THIN FILMS;

EID: 27144540590 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.08.011 Document Type: Article

Times cited : (1)

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