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Volumn 75, Issue 14, 1999, Pages 2126-2128

Low temperature processed 0.7SrBi2Ta2O9-0.3Bi3TaTio 9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

(3) Ryu, S O a Joshi, P C b Desu, S B c

a Virginia Polytechnic Institute and State University (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c University of Massachusetts (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; DEPOSITION; ELECTRODES; FERROELECTRIC MATERIALS; MAGNETIC FILM STORAGE; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; SUBSTRATES;

ELECTRODE BARRIER LAYERS; METALORGANIC SOLUTION DEPOSITION; POLYCRYSTALLINE THIN FILMS;

MAGNETIC THIN FILMS;

EID: 0032613366 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124938 Document Type: Article

Times cited : (30)

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