Long term stability of dry etched magnetoresistive random access memory elements

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 1, 2000, Pages 268-272

  Jung, K B ^a   Marburger, J ^b   Sharifi, F ^b   Park, Y D ^a   Lambers, E S ^a   Pearton, S J ^a  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; CLEANING; CORROSION; DEGRADATION; DRY ETCHING; MAGNETIC PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

DEIONIZED WATER RINSING; MAGNETIC MULTILAYER STRUCTURES; MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENTS; POST ETCH CLEANING;

MULTILAYERS;

EID: 0033718138     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582145     Document Type: Article

References (2)

1. B. A. Everitt, A. V. Pohm, and J. M. Daughton, J. Appl. Phys. 81, 2639 (1997).
2. R. White, IEEE Trans. Magn. 28, 2482 (1992).