Etching characteristics of magnetic materials (Co, Fe, Ni) using CO/NH3 gas plasma for hardening mask etching

Vacuum

Volumn 66, Issue 3-4, 2002, Pages 479-485

  Matsui, N ^a   Mashimo, K ^a   Egami, A ^a   Konishi, A ^a   Okada, O ^a   Tsukada, T ^a  

^a Anelva Corporation ^*  (Japan)

Author keywords

CO NH3 high density helicon plasma; HM etching; Magnetic materials; Magnetic random access memory (MRAM); NiFe; Ta; Ti; Tunneling magnet resistive multi layers (TMR)

Indexed keywords

CARBONIZATION; HARDENING; ION BEAMS; MAGNETIC ANISOTROPY; MAGNETORESISTANCE; MASKS; MULTILAYERS; OXIDATION; PLASMA DENSITY; PLASMA ETCHING; PLASMA SOURCES; RANDOM ACCESS STORAGE;

TUNNELING MAGNETO-RESISTIVE (TMR) MULTILAYERS;

FERROMAGNETIC MATERIALS;

EID: 0037136178     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00119-7     Document Type: Article

References (11)