Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

Surface Science

Volumn 603, Issue 3, 2009, Pages 518-522

  Tereshchenko, O E ^a   Paget, D ^b   Rowe, A C H ^b   Berkovits, V L ^c   Chiaradia, P ^d   Doyle, B P ^e   Nannarone, S ^e,f  

^a NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^c IOFFE INSTITUTE   (Russian Federation)

^d NAST Centre   (Italy)

^e LABORATORIO TASC   (Italy)

^f UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

HCl isopropanol treatment; InAs; Low energy electron diffraction; Passivation; Soft X ray photoemission

Indexed keywords

ANNEALING; ARSENIC; BALLOONS; CHARGE TRANSFER; DESORPTION; DIFFRACTION; EMISSION SPECTROSCOPY; HYDROCHLORIC ACID; INDIUM; INDIUM ARSENIDE; ION EXCHANGE; LOW ENERGY ELECTRON DIFFRACTION; PASSIVATION; PHOTOELECTRICITY; PHOTOEMISSION; SEMICONDUCTING INDIUM; THERMAL EVAPORATION;

CHEMICAL TREATMENTS; ENERGY ELECTRON DIFFRACTION; HCL-ISOPROPANOL TREATMENT; INAS; INAS(1 1 1); PHOTOEMISSION SPECTROSCOPY (PES); PREPARATION METHODS; SIGNIFICANT REDUCTION; SOFT X-RAY PHOTOEMISSION; SURFACE COMPONENTS;

ELECTRON DIFFRACTION;

EID: 58749098033     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.12.014     Document Type: Article

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