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Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 468-472

First-principles investigations of surface reconstructions of an InAs(1 1 1)B surface

(1) Taguchi, A a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds

Indexed keywords

ELECTRONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

ATOMIC CONFIGURATION; CHEMICAL POTENTIAL; SURFACE RECONSTRUCTION; TRIMER RECONSTRUCTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18544383010 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.065 Document Type: Conference Paper

Times cited : (22)

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