|
Volumn 600, Issue 3, 2006, Pages 577-582
|
Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces
|
Author keywords
Chemical passivation; Gallium arsenide; Low energy electron diffraction; Photoelectron spectroscopy; Polar crystal surfaces
|
Indexed keywords
ARSENIC COMPOUNDS;
COMPOSITION;
ELECTRON ENERGY LOSS SPECTROSCOPY;
LOW ENERGY ELECTRON DIFFRACTION;
PASSIVATION;
PHENOLS;
SURFACE STRUCTURE;
X RAY PHOTOELECTRON SPECTROSCOPY;
POLAR CRYSTAL SURFACES;
STRUCTURAL PROPERTIES;
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 31744433209
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2005.11.007 Document Type: Article |
Times cited : (14)
|
References (22)
|