SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 570, Issue 3, 2004, Pages 237-244

Well-ordered (100) InAs surfaces using wet chemical treatments

(5) Tereshchenko, O E a Placidi, E b Paget, D c Chiaradia, P b Balzarotti, A b

a NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

b UNIVERSITY OF ROME TOR VERGATA (Italy)

c LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE (France)

Author keywords

Gallium arsenide; Indium arsenide; Low energy electron diffraction (LEED); Reflection spectroscopy; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography

Indexed keywords

ANISOTROPY; ANNEALING; HYDROCHLORIC ACID; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; VACUUM APPLICATIONS;

GALLIUM ARSENIDE; INDIUM ARSENIDE; REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS); REFLECTION SPECTROSCOPY;

INDIUM COMPOUNDS;

EID: 5744236943 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2004.07.047 Document Type: Article

Times cited : (22)

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