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Volumn 94, Issue 2, 2009, Pages

Annealing effects on faceting of InAsGaAs (001) quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GROWTH (MATERIALS); OPTICAL WAVEGUIDES; PRESSURE DROP; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS;

EID: 58349114111     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056654     Document Type: Article
Times cited : (22)

References (26)
  • 23
    • 58349092851 scopus 로고    scopus 로고
    • (private communication). Although in the present paper and in Refs. the same growth temperature is reported, considering the different methods used for temperature measurements and quite different QDs dimension found, in present case a temperature 15-20 °C lower is more than likely.
    • A. Rastelli (private communication). Although in the present paper and in Refs. the same growth temperature is reported, considering the different methods used for temperature measurements and quite different QDs dimension found, in present case a temperature 15-20 °C lower is more than likely.
    • Rastelli, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.