In Situ scanning tunneling microscope observation of InAs wetting layer formation on GaAs(001) during molecular beam epitaxy growth at 500°C

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 29-32, 2006, Pages

  Honma, Tsuyoshi ^a,b,c   Tsukamoto, Shiro ^a   Arakawa, Yasuhiko ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

^c NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

GaAs; In situ; InAs; Molecular beam epitaxy; Quantum dots; RHEED; Scanning tunneling microscope; Wetting layer

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; TWO DIMENSIONAL; WETTING;

FLOW GROWTH; SCANNING TUNNELING MICROSCOPES; WETTING LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34548548265     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L777     Document Type: Article

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