Quantum rings formed in InAs QDs annealing process

Applied Surface Science

Volumn 255, Issue 8, 2009, Pages 4452-4455

  Jia, Guo zhi ^a   Yao, Jiang hong ^b   Shu, Yong chun ^b   Xing, Xiao dong ^b   Pi, Biao ^b  

^a TIANJIN INSTITUTE OF URBAN CONSTRUCTION   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Annealing; Atomic force microscopy; Molecular beam epitaxy; Quantum rings

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANORINGS;

ANNEALING PROCESS; EFFECT OF ANNEALING; GROWTH TECHNIQUES; INAS QUANTUM DOTS; NITROGEN AMBIENT; QUANTUM RING; STRANSKI-KRASTANOW GROWTH MODE; UNIFORM DISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 58349107508     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.042     Document Type: Article

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