Transition mechanism of InAs quantum dot to quantum ring revealed by photoluminescence spectra

IEEE Photonics Technology Letters

Volumn 20, Issue 16, 2008, Pages 1372-1374

  Dai, Jong Horng ^a   Lee, Jheng Han ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Blue shifted; Outward diffusion; Quantum dot (QD); Quantum ring (QR)

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM ALLOYS; IMAGING TECHNIQUES; INDIUM ARSENIDE; LANDFORMS; LIGHT EMISSION; LUMINESCENCE; MECHANISMS; MICROSCOPIC EXAMINATION; NANORINGS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

BLUE-SHIFTED; CRITICAL THICKNESSES; OUTWARD DIFFUSION; PHOTO-LUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE SPECTRA; QUANTUM DOT; QUANTUM DOT (QD); QUANTUM RING; QUANTUM RING (QR); STRAIN-ENERGY; THIN LAYERING; TRANSITION MECHANISMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49349094885     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.926813     Document Type: Article

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