Microstructural and optical properties of multiple closely stacked InAs/GaAs self-assembled quantum dot arrays

Journal of Physics and Chemistry of Solids

Volumn 65, Issue 5, 2004, Pages 927-931

  Kim, T W ^a   Kim, M D ^b  

^a Hanyang University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

A. Nanostructures; B. Epitaxial growth; D. Optical properties

Indexed keywords

ACTIVATION ENERGY; ARRAYS; ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

INTERBAND TRANSITIONS; NANOSTRUCTURES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 1542533060     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2003.10.056     Document Type: Article

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