Annealing Effect on the Formation of In(Ga)As Quantum Rings From InAs Quantum Dots

IEEE Photonics Technology Letters

Volumn 20, Issue 2, 2008, Pages 165-167

  Dai, Jong Horng ^a   Lee, Jheng Han ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Adatom migration; annealing time; elastic relax ation; quantum dots (QDs); quantum rings (QRs)

Indexed keywords

EID: 85008010321     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2007.912481     Document Type: Article

References (10)

1. Y. T. Dai, J. C. Fan, Y. F. Chen, R. M. Lin, S. C. Lee, and H. H. Lin, “Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses,” J. Appl. Phys., vol. 82, no. 9, pp. 4489–4492, Nov. 1, 1997.
2. N. N. Ledentsov, V. A. Shchukin, D. Bimberg, V. M. Ustinov, N. A. Cherkashin, Y. G. Musikhin, B. V. Volovik, G. E. Cirlin, and Z. I. Alferov, “Reversibility of the island shape, volume, and density in Stranski-Krastanow growth,” Semicond. Sci. Technol., vol. 16, pp. 502–506, 2001.
3. J. Tersoff and F. K. LeGoues, “Competing relaxation mechanisms in strained layers,” Phys. Rev. Lett., vol. 72, no. 22, pp. 3570–3573, May. 1994.
4. N. K. Cho, S. P. Ryu, J. D. Song, W. J. Choi, J. I. Lee, and H. Jeon, “Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy,” Appl. Phys. Lett., vol. 88, pp. 133104 1–133104 3, 2006.
5. K. Takehana, F. Pulizzi, A. Patane, M. Henini, P. C. Main, L. Eaves, D. Granados, and J. M. Garcia, “Controlling the shape of InAs self-as-sembled quantum dots by thin GaAs capping layers,” J. Cryst. Growth, vol. 251, pp. 155-160, 2003.
6. K. Park, P. Moon, E. Ahn, S. Hong, E. Yoon, J. W. Yoon, H. Cheong, and J. P. Leburton, “Effects of thin GaAs insertion layer on InAs/(In-GaAs)/InP(001) quantum dots grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 86, pp. 223110 1–223110 3, 2005.
7. A. Lorke, R. Blossey, J. M. Garcia, M. Bichler, and G. Abstreiter, “Morphological transformation of InyGa1_yAs islands, fabricated by Stranski-Krastanov growth,” Mater. Sci. Eng., vol. B88, pp. 225–229, 2002.
8. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, “In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(00l),” Appl. Plys. Lett., vol. 68, pp. 3299–3301, 1996.
9. P. Offermans, P. M. Koenraad, J. H. Wolter, D. Granados, J. M. Garcia, V. M. Fomin, V. N. Gladilin, and J. T. Devreese, “Atomic-scale struc-ture of self-assembled In(Ga)As quantum rings in GaAs,” Appl. Phys. Lett., vol. 87, no. 13, pp. 131902 1–131902 3, 2005.
10. Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage-tun-able middle-and long-wavelength infrared photoresponse in self-as-sembled InAs quantum dots,” Appl. Phys. Lett., vol. 80, pp. 2490–2492, 2002.