The influence of InAs coverage on the performances self-assembled InGaAs quantum rings

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 841-845

  Huang, Chun Yuan ^a   Wu, Meng Chyi ^a   Lin, Shih Yen ^b   Dai, Jong Horng ^c   Lee, Si Chen ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SELF ASSEMBLY;

CAPPING LAYERS; INTERMIXING; QUANTUM DOT HEIGHT; SIZE NON-UNIFORMITY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33947320761     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.267     Document Type: Article

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