Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1843-1847

  Fonseca, James ^a   Kaya, Savas ^a  

^a Ohio University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GREEN'S FUNCTION; LITHOGRAPHY; POISSON DISTRIBUTION; SILICON ON INSULATOR TECHNOLOGY; WAVE EQUATIONS;

DRIFT-DIFFUSION (DD) MODEL; DUAL-GATE (DG); NON-EQUILIBRIUM GREEN'S FUNCTION (NEGF); OXIDE ROUGHNESS;

MOSFET DEVICES;

EID: 3142721450     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.024     Document Type: Conference Paper

References (12)

1. Yu B. IEDM Tech. Dig. 2001;937.
2. Kim K., Fossum J. IEEE Trans. Elec. Dev. 2001;2861.
3. International Technology Roadmap for Semiconductors, 2001 Edition.
4. Asenov A., Kaya S., Davies J.H. IEEE Trans. Elec. Dev. 2002;112.
5. For more information visit NANOHUB at http://www.nanohub.purdue.edu.
6. Asenov A., Kaya S., Brown A.R. IEEE Trans. Elec. Dev. 50(May):2003;1254-1260.
7. Datta S. Electronic transport in mesoscopic systems. 1995;Cambridge University Press.
8. Ren Z. Nanoscale MOSFET: Physics, Simulation, and Design, PhD Thesis, 2001.
9. Goodnick S.M., et al. Phys. Rev. B. 32:1985;8171.
10. Chin A., et al. IEEE Electron Dev. Lett. 18:1997;417.
11. Momose H.S., et al. IEEE Trans. Elec. Dev. 45:1998;691.
12. Yu J, et al. Ext. Abs. Si Nanoelectronics Workshop, 75, 2002.