Metal containing link formed in amorphous silicon metal-to-metal antifuse

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 699-704

  Hawley, Frank ^a   Issaq, Farid ^a   Ranaweera, Jeewika ^a   Lambertson, Roy ^a   McCollum, John ^a  

^a Actel Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HYDROGENATION; LOGIC CIRCUITS; REFRACTORY METAL COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

BARRIER METALS; PROGRAMMABLE DEVICES;

AMORPHOUS SILICON;

EID: 1642459332     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-762-a16.7     Document Type: Article

References (6)

1. C. Shih, R. Lambertson, F. Hawley, F. Issaq, J. McCollum, E. Hamdy, H. Sakurai, H. Yuasa, H. Honda, T. Yamaoka, T. Wada, C. Hu, Characterization and Modeling of a Highly Reliable Metal-to-Metal Antifuse for High Performance and High-Density Field-Programmable Gate Arrays, IEEE IRPS Proceedings, pg 25-33 (1997)
2. E.Hamdy, J. McCollum, S. Chen, S. Chiang, S. Eltoukhy, J. Chang, T. Speers, A. Mohsen, Dielectric Based Antifuse for Logic and Memory IC's, IEEE IEDM Technical Digest, pg 786-789 (1988)
3. C. Hu, (invited) Interconnect Devices for Field Programmable Gate Arrays, IEEE IEDM Technical Digest, pg 591-594 (1992)
4. S.Chiang, R. Forouhi, W.Chen, F. Hawley, J. McCollum, E. Hamdy, C. Hu, Antifuse Structure Comparison for Field Programmable Gate Arrays, IEEE IEDM Technical Digest, pg 611-614 (1992)
5. M. Takagi, I. Yoshii, N. Ikeda, H. Yasuda, K. Hama, A Highly Reliable Metal-to-Metal Antifuse for High-Speed Field Programmable Gale Arrays, IEEE IEDM Technical Digest, pg 31-34 (1993)
6. K. Gordon, J. Wong, Conducting Filament of the Programmed Metal Electrode Amorphous Silicon Antifuse, IEEE IEDM Technical Digest, pg 27-30 (1993)