Gate dielectrics for high mobility semiconductors

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 295-306

  Dimoulas, A ^a   Panayiotatos, Y ^a   Tsipas, P ^a   Galata, S ^a   Mavrou, G ^a   Sotiropoulos, A ^a   Marchiori, C ^b   Rossel, C ^b   Webb, D ^b   Andersson, C ^b   Sousa, M ^b   Richter, M ^b   Fompeyrine, J ^b  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL STABILITY; DIELECTRIC DEVICES; ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; PASSIVATION; RARE EARTHS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SURFACE DEFECTS;

AMORPHOUS SI; CHARGED SURFACES; GAAS SURFACES; GE SURFACES; HIGH-MOBILITY SEMICONDUCTORS; RARE EARTH OXIDE; SPACER LAYER; SURFACE CHANNEL;

GATE DIELECTRICS;

EID: 58149499215     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981611     Document Type: Conference Paper

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