Surface activation using remote plasma for silicon to quartz wafer bonding

Microsystem Technologies

Volumn 15, Issue 3, 2009, Pages 407-412

  Belford, R E ^a,b   Sood, S ^a,c  

^a Braidwood House Silverburn   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c SUSS MicroTec Lithography GmbH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC MICROSCOPES; COVALENT BONDS; INTERFACIAL ENERGY; OXIDE MINERALS; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; QUARTZ; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SURFACE CHEMISTRY; SURFACE ROUGHNESS; SURFACE TENSION; SURFACE TREATMENT; VAN DER WAALS FORCES;

ANNEALING CONDITIONS; ANNEALING TEMPERATURES; ATOMIC FORCE MICROSCOPES; BOND INTERFACES; BONDING ENERGIES; COVALENT BONDINGS; ELEVATED TEMPERATURES; EXPOSURE TIMES; GAS SPECIES; NO TAILS; PLASMA EXPOSURE TIMES; PLASMA PARAMETERS; PLASMA SURFACES; PLASMA TECHNIQUES; PLASMA TREATMENTS; POST ANNEAL; QUARTZ BONDINGS; REMOTE PLASMA TREATMENTS; REMOTE PLASMAS; SCANNING ACOUSTIC MICROSCOPIES; SURFACE ACTIVATIONS; SURFACE DAMAGES; SURFACE ENERGIES;

WAFER BONDING;

EID: 58149327118     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-008-0710-4     Document Type: Article

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