Influence of polarization field on the lasing properties of III-nitride quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 558-561

  Dialynas, G E ^a   Deligeorgis, G ^a   Zervos, M ^a,b   Pelekanos, N T ^a,b  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

Internal field effect; Nitride heterostructures; Quantum well laser

Indexed keywords

APPROXIMATION THEORY; CURRENT DENSITY; ELECTRIC FIELDS; LIGHT POLARIZATION; NITRIDES;

INTERNAL FIELD EFFECT; NITRIDE HETEROSTRUCTURES; OPTOELECTRONIC PROPERTIES; QUANTUM WELL LASER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646176402     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.153     Document Type: Article

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