Strain evolution in Al conductor lines during electromigration

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Zhang, H ^a   Cargill, G S ^a   Ge, Y ^b   Maniatty, A M ^b   Liu, W ^c  

^a Lehigh University   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BAMBOO; CRYSTAL GROWTH; DIFFRACTION; ELECTROMIGRATION; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; HOLOGRAPHIC INTERFEROMETRY; MATHEMATICAL MODELS; MICROSTRIP LINES; NUMERICAL ANALYSIS; PASSIVATION;

CONDUCTOR LINES; DEVIATORIC STRAINS; EFFECTIVE VALENCES; ELASTIC STRAINS; ESHELBY MODELS; FEM CALCULATIONS; INTERFACE DIFFUSIONS; LAUE DIFFRACTION PATTERNS; MECHANICAL CONSTRAINTS; NON UNIFORMS; PASSIVATION LAYERS; POLYCRYSTAL LINES; STRAIN EVOLUTIONS; STRAIN GRADIENTS; SYNCHROTRON X RAYS; WHITE BEAMS;

STRAIN;

EID: 58149267514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3041152     Document Type: Article

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