Effects of failure criteria on the lifetime distribution of dual-damascene Cu line/via on W

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3737-3744

  Liu, R F ^a,c   Hu, C K ^a   Gignac, L ^a   Harper, J M E ^a   Lloyd, J ^a   Liu, X H ^a   Stamper, A K ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN CONSTANT; DIFFUSION BARRIERS;

CHEMICAL MECHANICAL POLISHING; COPPER; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC INSULATORS; ELECTRIC LINES; ELECTRIC RESISTANCE; METALLIZING; TUNGSTEN;

ELECTROMIGRATION;

EID: 1942542392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650887     Document Type: Article

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