Creating nanocrystals in amorphous silicon using a conductive tip

Nanotechnology

Volumn 20, Issue 4, 2009, Pages

  Rezek, B ^a   Sipek E ^a   Ledinsky M ^a   Stuchlik J ^a   Vetushka, A ^a   Kocka J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; ELECTRIC DISCHARGES; ELECTRODES; ENERGY TRANSFER; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES;

ATOMIC FORCES; CONDUCTIVE TIPS; CURRENT AMPLITUDES; ELECTRICAL CONTACTS; ELECTRICAL CURRENTS; ELECTRICAL DISCHARGES; MOSFET TRANSISTORS; NANOCRYSTAL FORMATIONS; NANOSCALE DIMENSIONS; NICKEL ELECTRODES; PARALLEL CAPACITANCES; PHASE CRYSTALLIZATIONS; ROOM TEMPERATURES; SILICIDE FORMATIONS; SILICON CRYSTALS;

AMORPHOUS SILICON;

NANOCRYSTAL; NICKEL; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONDUCTIVE TIP; CRYSTAL; CRYSTALLIZATION; ELECTRIC ACTIVITY; ELECTRIC CAPACITANCE; ELECTRIC CURRENT; ELECTRODE; ENERGY TRANSFER; FILM; MEDICAL INSTRUMENTATION; MODEL; NANOANALYSIS; PRIORITY JOURNAL; RAMAN SPECTROMETRY; ROOM TEMPERATURE; SEMICONDUCTOR; SOLID; THERMODYNAMICS;

EID: 58149260304     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/4/045302     Document Type: Article

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