Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4220-4228

  Rezek, B ^a   Nebel, C E ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; EPITAXIAL REGROWTH; FOCUSED LASER BEAMS; GROWTH REGIME; INDIVIDUAL GRAIN BOUNDARIES; INTERFERENCE PATTERNS; INTERFERING BEAMS; LASER BEAM INDUCED CURRENT; LASER CRYSTALLIZATION; LIGHT BEAM INDUCED CURRENTS; LOCAL FIELDS; LOCK-IN; MULTIPLE PULSE; PHOTO-CARRIERS; PHOTO-ELECTRICAL PROPERTIES; PHOTOCURRENT RESPONSE; POLYCRYSTALLINE SILICON LAYERS; POLYCRYSTALLINE SILICON THIN FILM; SAMPLE THICKNESS; SINGLE PULSE; SPATIAL RESOLUTION; TEMPERATURE PROFILES; TRIANGULAR SHAPES;

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; INDUCED CURRENTS; PHOTOCURRENTS; POLYSILICON; THIN FILMS;

FILM PREPARATION;

EID: 0036536863     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1458058     Document Type: Article

References (27)

1. T. Matsuyama et al., J. Non-Cryst. Solids 198-200, 940 (1996). jnc JNCSBJ 0022-3093
2. N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, in Laser and Electron-Beam Solid Interactions and Material Processing, edited by J. F. Gibbons, L. D. Hess, and T. W. Sigmon (Elsevier, New York, 1981), p. 463.
3. P. Mei et al., J. Appl. Phys. 76, 3194 (1994). jap JAPIAU 0021-8979
4. J. S. Im and H. J. Kim, Appl. Phys. Lett. 63, 1969 (1993). apl APPLAB 0003-6951
5. J. S. Im and R. S. Sposili, MRS Bull. 21, 38 (1996). mbu MRSBEA 0883-7694
6. C. E. Nebel et al., Phys. Status Solidi A 166, 667 (1998). psa PSSABA 0031-8965
7. G. Aichmayr et al., J. Appl. Phys. 85, 4010 (1999). jap JAPIAU 0021-8979
8. B. Rezek, C. E. Nebel, and M. Stutzmann, J. Non-Cryst. Solids 266-269, 650 (2000). jnc JNCSBJ 0022-3093
9. B. Rezek, C. E. Nebel, and M. Stutzmann, Jpn. J. Appl. Phys., Part 2 38, L1083 (1999). jjc JAPLD8 0021-4922
10. J. Palm, J. Appl. Phys. 74, 1169 (1993). jap JAPIAU 0021-8979
11. R. Sheer, Solid State Phenom. 67-68, 57 (1999). ssq DDBPE8 1012-0394
12. K. A. Record, D. R. Palmieri, N. M. Haegel, and D. Wynne, Appl. Phys. Lett. 75, 3829 (1999). apl APPLAB 0003-6951
13. K. Masri et al., Mater. Res. Soc. Symp. Proc. 106, 89 (1988). mrs MRSPDH 0272-9172
14. J. Palm, D. Steinbach, and H. Alexander, Mater. Sci. Eng., B 24, 56 (1994). msb MSBTEK 0921-5107
15. C. Eisele, C. E. Nebel, and M. Stutzmann, J. Non-Cryst. Solids 266-269, 1109 (2000). jnc JNCSBJ 0022-3093
16. Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer (Academic, New York, 1982).
17. J. F. Young, J. S. Preston, H. M. van Driel, and J. E. Sipe, Phys. Rev. B 27, 1155 (1983). prb PRBMDO 0163-1829
18. D. K. Fork et al., Appl. Phys. Lett. 68, 2138 (1996). apl APPLAB 0003-6951
19. F. S. d'Aragona, J. Electrochem. Soc. 119, 948 (1972). jes JESOAN 0013-4651
20. Physics and Electronic Properties of Microcrystalline Semiconductors, edited by J. Kanicki (Artech House, New York, 1992).
21. CRC Handbook of Chemistry and Physics, edited by R. C. Weast and M. J. Astle (Chemical Rubber Corp., Boca Raton, FL, 1974).
22. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975). jap JAPIAU 0021-8979
23. P. G. L. Comber, G. Willeke, and W. E. Spear, J. Non-Cryst. Solids 59-60, 795 (1983). jnc JNCSBJ 0022-3093
24. C. Donolato, Appl. Phys. Lett. 43, 120 (1983). apl APPLAB 0003-6951
25. J. Marek, J. Appl. Phys. 53, 1454 (1982). jap JAPIAU 0021-8979
26. C. Donolato, J. Appl. Phys. 54, 1314 (1983). jap JAPIAU 0021-8979
27. A. Fejfar et al., J. Non-Cryst. Solids 227-230, 1006 (1998). jnc JNCSBJ 0022-3093