Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 10 A, 1999, Pages

  Rezek, Bohuslav ^a,b   Nebel, Christoph E ^a   Stutzmann, Martin ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; LIGHT INTERFERENCE; POLYCRYSTALLINE MATERIALS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; THIN FILMS;

INTERFERENCE LASER CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0033327126     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1083     Document Type: Article

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