Growth of twin-free heteroepitaxial diamond on Ir/YSZ/Si(111)

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Fischer, M ^a   Brescia, R ^a   Gsell, S ^a   Schreck, M ^a   Brugger, T ^b   Greber, T ^b   Osterwalder, J ^b   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DIAMONDS; DIFFRACTION; GALLIUM ALLOYS; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; ION BOMBARDMENT; IONS; IRIDIUM; MICROWAVES; NUCLEATION; PHOSPHORUS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SINGLE CRYSTAL SURFACES; SINGLE CRYSTALS; ZINC SULFIDE;

(111) ORIENTATIONS; CARBON LAYERS; DIAMOND GROWTHS; DIAMOND NUCLEATIONS; DIAMOND STRUCTURES; DIFFRACTOGRAMS; DO-MAINS; DOPED DIAMONDS; FINE STRUCTURES; GROWTH SUBSTRATES; HETEROEPITAXIAL; HETEROEPITAXIAL DIAMOND FILMS; HETEROEPITAXIAL NUCLEATIONS; HETEROJUNCTION DEVICES; HIGH RESOLUTIONS; IR(111); LATTICE IMAGING; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MOSAIC SPREADS; MULTILAYER STACKS; NOISE LEVELS; PATTERN FORMATIONS; PHOTOELECTRON DIFFRACTIONS; POLE FIGURES; SET-UPS; THREEFOLD SYMMETRIES; WIDE BAND GAP SEMICONDUCTOR MATERIALS; WURTZITE; X-RAY DIFFRACTIONS;

DIAMOND FILMS;

EID: 58149260028     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3019046     Document Type: Article

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