Epitaxial (100) iridium on A-plane sapphire: A system for wafer-scale diamond heteroepitaxy

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3847-3849

  Dai, Z ^a   Bednarski Meinke, C ^a   Loloee, R ^a   Golding, B ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; DIAMONDS; ELECTRON BEAMS; EPITAXIAL GROWTH; EVAPORATION; FILM GROWTH; SAPPHIRE; X RAY DIFFRACTION;

PINHOLE DENSITY;

IRIDIUM;

EID: 0038646349     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579560     Document Type: Article

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