A route to diamond wafers by epitaxial deposition on silicon via iridium/yttria-stabilized zirconia buffer layers

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4541-4543

  Gsell, S ^a   Bauer, T ^a   Goldfuss J ^a   Schreck, M ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; FILM GROWTH; NUCLEATION; PULSED LASER DEPOSITION; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON; SINGLE CRYSTALS; THERMAL EXPANSION; THERMAL STRESS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION; YTTRIUM COMPOUNDS; ZIRCONIA;

BIAS ENHANCED NUCLEATION (BEN); GROWTH TEMPERATURE; MOSAICITY REDUCTION; MULTILAYER STRUCTURES;

DIAMOND FILMS;

EID: 3042704366     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758780     Document Type: Article

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