Preparation of 4-inch Ir/YSZ/Si(001) substrates for the large-area deposition of single-crystal diamond

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1035-1038

  Fischer, M ^a   Gsell, S ^a   Schreck, M ^a   Brescia, R ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Bias enhanced nucleation; Heteroepitaxy; Iridium; Wafers; YSZ

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DIAMONDS; IRIDIUM; NONMETALS; OXIDE FILMS; POWDERS; SILICON; SILICON WAFERS; SPUTTER DEPOSITION;

BIAS ENHANCED NUCLEATION; DIAMOND SINGLE CRYSTALS; HETEROEPITAXY; HIGH-QUALITY; IRIDIUM LAYERS; LARGE-AREA DEPOSITION; MOSAIC SPREAD; MULTI-LAYER STRUCTURES; OVERLAYERS; OXIDE BUFFER LAYERS; OXIDE BUFFERS; PLAUSIBLE MECHANISMS; SINGLE-CRYSTAL DIAMONDS; WAFERS; YSZ;

SINGLE CRYSTALS;

EID: 48849095701     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.02.028     Document Type: Article

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