Influence of the preparation conditions on the morphology of perylene thin films on Si(111) and Si(100)

Journal of Chemical Physics

Volumn 129, Issue 24, 2008, Pages

  Casu, M B ^a,b   Yu, X ^b   Schmitt, S ^b   Heske, C ^b,c   Umbach, E ^b,d  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF NEVADA   (United States)

^d KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRON TRANSITIONS; FILM GROWTH; GROWTH (MATERIALS); KNOWLEDGE ENGINEERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS;

CRYSTALLINE PHASIS; EXPERIMENTAL TECHNIQUES; FILM MORPHOLOGIES; GROWTH MODES; HOMOGENEOUS FILMS; INTERMOLECULAR BONDINGS; ISLAND GROWTH MODES; LARGE DISPLAYS; MORPHOLOGICAL PROPERTIES; PERYLENE; PERYLENE THIN FILMS; PREPARATION CONDITIONS; PREPARATION PARAMETERS; SI (100) SUBSTRATES; SI(100); SI(111); SI(111) SUBSTRATES; SINGLE CRYSTAL SUBSTRATES; SINGLE GRAINS; STRONG COUPLINGS; WEAK COUPLINGS;

FILM PREPARATION;

EID: 58149242479     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3046685     Document Type: Article

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