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Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 427-431

Bonding properties of rf-co-sputtering amorphous Ge-C films studied by X-ray photoelectron and Raman spectroscopies

(3) Vilcarromero, J a Marques, F C b Andreu, J a

a UNIVERSITY OF BARCELONA (Spain)

b UNIVERSITY OF CAMPINAS (Brazil)

Author keywords

Films; Infrared; Raman spectroscopy

Indexed keywords

AMORPHOUS FILMS; BINDING ENERGY; CHEMICAL BONDS; COMPOSITION EFFECTS; ELECTRONIC PROPERTIES; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFTS; STOKES SCATTERING;

SEMICONDUCTING FILMS;

EID: 0032066791 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00085-4 Document Type: Article

Times cited : (34)

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