Carrier transport in Ge nanowire/Si substrate heterojunctions

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Lee, E K ^a   Kamenev, B V ^a   Tsybeskov, L ^a   Sharma, S ^b   Kamins, T I ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER TRANSPORT; GERMANIUM; NANOWIRES; PHOTOCONDUCTIVITY; SILICON;

CURRENT INSTABILITIES;

HETEROJUNCTIONS;

EID: 34249938033     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730558     Document Type: Article

References (30)

1. M. T. Björk, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magnusson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 0003-6951 10.1063/1.1447312 80, 1058 (2002).
2. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, Nature 0028-0836 10.1038/415617a 415, 617 (2002).
3. M. T. Björk, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 0003-6951 10.1063/1.1527995 81, 4458 (2002).
4. Y. Wu, R. Fan, and P. Yang, Nano Lett. 1530-6984 10.1021/nl0156888 2, 83 (2002).
5. S. S. Yi, G. Girolami, J. Amano, M. Saif Islam, S. Sharma, T. I. Kamins, and I. Kimukin, Appl. Phys. Lett. (in press).
6. Q. Tang, T. I. Kamins, X. Liu, D. E. Grupp, and J. S. Harris, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.1945371 8, G204 (2005).
7. M. Saif Islam, S. Sharma, T. I. Kamins, and R. S. Williams, Nanotechnology 0957-4484 10.1088/0957-4484/15/5/L01 15, L5 (2004).
8. M. Saif Islam, S. Sharma, T. I. Kamins, and R. S. Williams, Appl. Phys. A 0947-8396 10.1007/s00339-004-3177-x 80, 1133 (2005).
9. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 0022-0248 10.1016/0022-0248(74)90424-2 27, 118 (1974).
10. J. W. Matthews, J. Vac. Sci. Technol. 0022-5355 10.1116/1.568741 12, 126 (1975).
11. E. Ertekin, P. A. Greaney, D. C. Chrzan, and T. D. Sands, Appl. Phys. 97, 114325 (2005).
12. G. Kästner and U. Gösele, Philos. Mag., Suppl. 84, 3803 (2004).
13. B. V. Kamenev, V. Sharma, L. Tsybeskov, and T. I. Kamins, Phys. Status Solidi A 0031-8965 10.1002/pssa.200521024 202, 2753 (2005).
14. V. Sharma, B. V. Kamenev, and L. Tsybeskov, Mater. Res. Soc. Symp. Proc. 832, F7.20 (2005).
15. T. I. Kamins, X. Li, R. S. Williams, and X. Liu, Nano Lett. 1530-6984 10.1021/nl035166n 4, 503 (2004).
16. Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan, Adv. Mater. 15, 353 (2003). 0935-9648
17. C. N. R. Rao, F. L. Deepak, G. Gundiah, and A. Govindaraj, Prog. Solid State Chem. 0079-6786 10.1016/j.progsolidstchem.2003.08.001 31, 5 (2003).
18. Y. Wu and P. Yang, J. Am. Chem. Soc. 0002-7863 10.1021/ja0059084 123, 3165 (2001).
19. F. M. Ross, J. Tersoff, and M. C. Reuter, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.95.146104 95, 146104 (2005).
20. T. Hanrath and B. A. Korgel, J. Phys. Chem. B 1089-5647 10.1021/jp044491b 109, 5518 (2005).
21. D. J. Paul, Adv. Mater. 11, 191 (1999). 0935-9648
22. R. N. Musin and X. -Q. Wang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71. 155318 71, 155318 (2005).
23. W. Lu, J. Xiang, B. P. Timko, Y. Wu, and C. M. Lieber, Proc. Natl. Acad. Sci. U.S.A. 0027-8424 10.1073/pnas.0504581102 102, 10046 (2005).
24. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, edited by, O. Madelung, (Springer, Berlin, 1982), Vols. 17(a) and 17(b).
25. Semiconductor Superlattices: Growth and Electronic Properties, edited by, H. T. Grahn, (Word Scientific, Singapore, 1995), p. 220.
26. B. Gunn, IBM J. Res. Dev. 0018-8646 10, 300 (1966); B. Gunn, IBM J. Res. Dev. 8, 141 (1964).
27. B. Gunn, IBM J. Res. Dev. 0018-8646 10, 300 (1966); B. Gunn, IBM J. Res. Dev. 8, 141 (1964).
28. Y. H. Zhang, X. P. Yang, W. Liu, P. H. Zhang, and D. S. Jiang, Appl. Phys. Lett. 0003-6951 10.1063/1.112124 65, 1148 (1994).
29. E. E. Mendez, E. Calleja, and W. I. Wang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.34.6026 34, 6026 (1986).
30. W. G. Guion and D. K. Ferry, J. Appl. Phys. 0021-8979 10.1063/1.1660570 42, 2502 (1971).