Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods

Journal of Nanoelectronics and Optoelectronics

Volumn 2, Issue 2, 2007, Pages 191-196

  Ren, Lingling ^a   Jeung, Won Young ^a   Han, Hee Chul ^b   Choi, Heon Jin ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Er; Ge Nanowire; Optical Activation; Photoluminescence; Si Nanowire; Yb

Indexed keywords

CHEMICAL ACTIVATION; COLLOIDS; ELECTRIC WIRE; ELECTROLYSIS; GALLIUM ALLOYS; GELATION; GELS; GERMANIUM; IONS; LIGHT EMISSION; LUMINESCENCE; METALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; RARE EARTH ELEMENTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLS; YTTERBIUM;

CO-DOPED; CO-DOPING; ELECTRONIC MATERIALS; ER-DOPED; HIGH AREAL DENSITY; INDIRECT BAND-GAP; INDIRECT-GAP NATURE; OPTICAL (PET) (OPET); OPTICAL ACTIVATION; PHOTOLUMINESCENCE (PL) INTENSITY; SI AND GE NANOWIRES; SOL-GEL METHODS;

ERBIUM;

EID: 48249120445     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2007.204     Document Type: Article

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