Identification and control of the origin of photoluminescence from silicon quantum dots

Nanotechnology

Volumn 19, Issue 45, 2008, Pages

  Hao, H L ^a   Shen, W Z ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEFECT DENSITY; HYDROGEN; INERT GASES; LIGHT EMISSION; LUMINESCENCE; NITRIDES; NONMETALS; OPTICAL WAVEGUIDES; OXYGEN; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE;

ANNEALING TREATMENTS; HYDROGENATED AMORPHOUS SILICON NITRIDES; LOCALIZED EXCITONS; OXIDIZED SAMPLES; PL EXCITATIONS; RADIATIVE DEFECTS; RADIATIVE RECOMBINATIONS; SILICON QUANTUM DOTS; STRUCTURAL CHARACTERIZATIONS; SURFACE STATES; TIME-RESOLVED;

AMORPHOUS SILICON;

ARGON; HYDROGEN; NITROGEN; OXYGEN; QUANTUM DOT; SILICON; SILICON NITRIDE;

ARTICLE; CHEMICAL BOND; CHEMICAL MODIFICATION; EXCITATION; FILM; OXIDATION; PHOTOLUMINESCENCE; PRIORITY JOURNAL; SPECTRUM; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; TIME;

EID: 58149214258     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/45/455704     Document Type: Article

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