Epitaxial growth of GaN films grown on single crystal Fe substrates

Applied Physics Letters

Volumn 93, Issue 25, 2008, Pages

  Okamoto, K ^a   Inoue, S ^b   Matsuki, N ^b   Kim, T W ^b   Ohta, J ^a,b   Oshima, M ^c,e   Fujioka, H ^a,b,e   Ishii, A ^d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d TOTTORI UNIVERSITY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; GAS ADSORPTION; GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SUBSTRATES;

ADSORPTION PROCESSES; ALN FILMS; DO-MAINS; EPITAXIAL RELATIONSHIPS; FIRST-PRINCIPLES CALCULATIONS; GAN EPITAXIAL FILMS; GAN FILMS; INITIAL STAGES; NITROGEN ATOMS; POLYCRYSTAL LINES; PULSED LASERS; X-RAY REFLECTIVITIES;

GALLIUM ALLOYS;

EID: 58149159405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056117     Document Type: Article

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