Theoretical characterization of carrier compensation in P-doped diamond

Applied Surface Science

Volumn 255, Issue 7, 2009, Pages 3994-4000

  Yan, C X ^a,b   Dai, Y ^a   Guo, M ^a   Huang, B B ^a   Liu, D H ^a  

^a SHANDONG UNIVERSITY   (China)

^b JINING UNIVERSITY   (China)

Author keywords

Carrier compensation; P doped diamond; The first principle

Indexed keywords

ELECTRONIC PROPERTIES; ELECTRONS; ENERGY GAP; SEMICONDUCTING INDIUM;

CARRIER COMPENSATION; DOPED DIAMONDS; ELECTRON-HOLE RECOMBINATION; EXPERIMENT RESEARCH; FIRST PRINCIPLE CALCULATIONS; FIRST PRINCIPLES; NUMBER OF ELECTRONS; RECOMBINATION CENTERS;

DIAMONDS;

EID: 58149100378     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.092     Document Type: Article

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