Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 PART A, 1998, Pages

  Saito, Takeyasu ^a   Kameta, Masanori ^a   Kusakabe, Katsuki ^a   Morooka, Shigeharu ^a   Maeda, Hideaki ^a   Hayashi, Yasunori ^a   Asano, Tanemasa ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Carrier concentration; Chemical vapor deposition; Conductivity; Diamond; Hall mobility; N type semiconductor; Triethylphosphine

Indexed keywords

ACTIVATION ENERGY; CARBON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; PHOSPHORUS; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL);

HALL MOBILITY; MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; TRIETHYLPHOSPHINE;

SEMICONDUCTING DIAMONDS;

EID: 0032072593     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l543     Document Type: Article

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