Electrical and structural properties of boron and phosphorus co-doped diamond films

Carbon

Volumn 42, Issue 8-9, 2004, Pages 1501-1506

  Hu, X J ^a   Li, R B ^a   Shen, H S ^a   Dai, Y B ^a   He, X C ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

A. Diamond; B. Doping, Annealing; C. Electron paramagnetic resonance; D. Electrical properties

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; LATTICE CONSTANTS; PARAMAGNETIC RESONANCE; PHOSPHORUS; RAMAN SCATTERING; SEMICONDUCTOR INSULATOR BOUNDARIES;

COLD IMPLANTATION AND RAPID ANNEALING (CIRA); DIAMOND CRYSTAL; ELECTRICAL PROPERTIES; RAMAN MEASUREMENTS;

DIAMOND FILMS;

EID: 2542427559     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2004.01.054     Document Type: Article

References (26)

1. Kajihara S.A., Antonelli A., Bernholc J., Car R. Nitrogen and potential n-type dopants in diamond. Phys. Rev. Lett. 66:1991;2010-2013.
2. Kalish R., Uzan-Saguy C., Walker R., Prawer S. Electrically active sulfur-defect complexes in sulfur implanted diamond. J. Appl. Phys. 94:2003;3923-3930.
3. Koizumi S. Growth and characterization of phosphorus doped n-type diamond thin films. Phys. Stat. Sol. (a). 172:1999;71-74.
4. Casanova N., Gheeraert E., Deneuville A., Uzan-Saguy C., Kalish R. ESR study of phosphorus implanted type IIa diamond. Phys. Stat. Sol. (a). 181:2000;5-10.
5. Prins J.F. Ion-implantation n-type diamond: electrical evidence. Diamond Relat. Mater. 4:1995;580-585.
6. Prins J.F. Towards improving the quality of semiconducting diamond layers doped with large atoms. Diamond Relat. Mater. 8:1999;1635-1641.
7. Prins J.F. Ion implantation of diamond for electronic application. Semicond. Sci. Technol. 18:2003;S27-S33.
8. Brandt O., Yang H., Kostial H., Ploog K.H. High p-type conductivity in cubic GaN/GaAs (1. 1 3) A by using Be as the acceptor and O as the codopant Appl. Phys. Lett. 69:1996;2707-2709.
9. Jung H.D., Song C.D., Wang S.Q., Arai K., Wu Y.H., Zhu Z., et al. Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique. Appl. Phys. Lett. 70:1997;1143-1145.
10. Nishimatsu T., Katayama-Yoshida H., Orita N. Valence controls and codoping for low-resistivity n-type diamond by ab-initio molecular-dynamics simulation. Mater. Sci. Forum. 258-263:1997;799-804.
11. Prawer S., Hoffman A., Kalish R. Ion beam induced conductivity in chemically vapor deposited diamond films. Appl. Phys. Lett. 57:1990;2187-2189.
12. Kalish R., Uzan-Saguy C., Locher R., Koidl P. Doping of polycrystalline diamond by boron ion implantation. Appl. Phys. Lett. 64:1994;2532-2535.
13. Fontaine F., Uzan-Saguy C., Philosoph B., Kalish R. Boron implantation/in situ annealing procedure for optimal p-type properties of diamond. Appl. Phys. Lett. 68:1996;2264-2266.
14. Kalish R. Ion-implantation in diamond and diamond films: doping, damage effects and their application. Appl. Surf. Sci. 117/118:1997;558-569. and Ref. [17] in it.
15. Uzan-Saguy C., Cytermann C., Brener R., Richter V., Shaanan M., Kalish R. Damage threshold for ion-beam induced graphitization of diamond. Appl. Phys. Lett. 67:1995;1194-1196.
16. Nishimori T., Nakano K., Sakamoto H., Takakuwa Y., et al. n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine. Appl. Phys. Lett. 71:1997;945-947.
17. Reznik A., Uzan-Saguy C., Kalish R. Effects of point defects on the electrical properties of doped diamond. Diamond Relat. Mater. 9:2000;1051-1056.
18. Zvanut M.E., Carlos W.E., Freitas J.A., Jamison K.D., Hellmer R.P. Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy. Appl. Phys. Lett. 65:1994;2287-2289.
19. Teicher M., Beserman R. Heavy ion implantation in diamond. J. Appl. Phys. 53:1982;1467-1469.
20. Dasgupta D., Demichelis F., Pirri C.F., Tagliaferro A. pi bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films. Phys. Rev. B. 43:1991;2131-2135.
21. Show Y., Nakamura Y., Izumi T., Deguchi M., Kitabatake M., Hirao T., et al. Formation of paramagnetic defects in CVD diamond films (ESR study). Thin Solid Films. 281-282:1996;275-278.
22. Show Y., Matsuoka F., Izumi T., Deguchi M., Kitabatake M., Sakakima H. ESR characterization of defects produced in diamond surface by B ion implantation. Appl. Surf. Sci. 117-118:1997;574-577.
23. Wang W.L., Polo M.C., Sańchez G., Cifre J., Esteve J. Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition. J. Appl. Phys. 80:1996;1846-1850.
24. Hu X.J., Dai Y.B., Shen H.S., Zhang Z.M., Li R.B., He X.C. A molecular dynamics study of interstitial boron in diamond. Physica B. 327:2003;39-42.
25. Prins J.F. Using ion implantation to dope diamond - an update on selected issues. Diamond Relat. Mater. 10:2001;1756-1764.
26. Jones R., Lowther J.E., Goss J. Limitations to n-type doping in diamond: the phosphorus-vacancy complex. Appl. Phys. Lett. 69:1996;2489-2491.