Growth and characterization of phosphorus doped n-type diamond thin films

Physica Status Solidi (A) Applied Research

Volumn 172, Issue 1, 1999, Pages 71-78

  Koizumi, S ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; HALL EFFECT; MICROWAVES; PHOSPHORUS; PLASMA APPLICATIONS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THIN FILMS;

HALL MOBILITY;

DIAMOND FILMS;

EID: 0033097276     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199903)172:1<71::AID-PSSA71>3.0.CO;2-N     Document Type: Article

References (10)

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