Growth of phosphorus-doped diamond using tertiarybutylphosphine and trimethylphosphine as dopant gases

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 340-343

  Kato, Hiromitsu ^a   Futako, Wataru ^a   Yamasaki, Satoshi ^a,b   Okushi, Hideyo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Chemical vapor deposition; n type diamond; Phosphorus doped; Tertiarybutylphosphine; Trimethylphosphine

Indexed keywords

CATHODOLUMINESCENCE; DIAMOND FILMS; DIAMONDS; EPITAXIAL GROWTH; GASES; ION IMPLANTATION; PH EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

N-TYPE DIAMOND; PHOSPHORUS-DOPED; TERTIARYBUTYLPHOSPHINE; TRIMETHYLPHOSPHINE;

PHOSPHORUS;

EID: 18444415168     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.11.032     Document Type: Conference Paper

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