Kinetic Monte Carlo simulation of an atomistic model for oxide island formation and step pinning during etching by oxygen of vicinal Si(100)

Thin Solid Films

Volumn 517, Issue 6, 2009, Pages 1949-1957

  Albao, Marvin A ^a   Chuang, Feng Chuan ^a   Evans, J W ^b,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b IOWA STATE UNIVERSITY   (United States)

^c IOWA STATE UNIVERSITY   (United States)

Author keywords

Etching; Kinetic Monte Carlo simulation; Nucleation; Si oxidation; Thin film growth

Indexed keywords

COSMIC RAY DETECTORS; ETCHING; GROWTH (MATERIALS); MODAL ANALYSIS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MOSFET DEVICES; NUCLEATION; OXIDATION; OXYGEN; RADIATION DAMAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILMS; TWO DIMENSIONAL;

ATOMISTIC MODELS; GAS MODELS; HIGHER TEMPERATURES; KINETIC MONTE CARLO SIMULATION; MODEL ANALYSIS; OXIDE ISLANDS; OXYGEN UPTAKES; SI OXIDATION; SI(100); SI(100) SURFACE; STEP EDGES;

FILM GROWTH;

EID: 58149097462     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.055     Document Type: Article

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