Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 42-45, 2005, Pages

  Togashi, Hideaki ^a   Asaoka, Hidehito ^b   Yamazaki, Tatsuya ^b,c   Suemitsu, Maki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c Eiko Engineering Company Limited   (Japan)

Author keywords

1 surface; Autocatalytic reaction; Critical island size; Island growth; Nucleation; Scanning tunneling microscopy; Si dry oxidation; Si(001) 2

Indexed keywords

NUCLEATION; OXIDATION; OXIDES; OXYGEN; SCANNING TUNNELING MICROSCOPY;

1 SURFACE; DRY OXIDATION; ISLAND GROWTH; SI DRY OXIDATION;

SILICON COMPOUNDS;

EID: 30344457566     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1377     Document Type: Article

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