Scanning tunneling microscopy studies of oxide growth and etching on Si(5 5 12)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1667-1670

  Skrobiszewski, J L ^a   Moore, J C ^a   Dickinson, J W ^a   Baski, A A ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN BOUNDARIES; ELECTRONIC STATES; PYRAMIDAL ISLANDS; SCANNING TUNNELING MICROSCOPY (STM);

AGGLOMERATION; ANISOTROPY; DIFFUSION; DIMERS; ETCHING; GROWTH KINETICS; MORPHOLOGY; NUCLEATION; OXIDES; SCANNING TUNNELING MICROSCOPY; SUBLIMATION; SURFACE CHEMISTRY;

SILICON WAFERS;

EID: 4444221692     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1760750     Document Type: Conference Paper

References (14)

1. J. Seiple, J. Pecquet, Z. Meng, and J. P. Pelz, J. Vac. Sci. Technol. A 11, 1649 (1993).
2. A. Feltz, U. Memmert, and R. J. Behm, Surf. Sci. 314, 34 (1994).
3. S. Hildebrandt, A. Kraus, R. Kulla, and H. Neddermeyer, Appl. Surf. Sci. 141, 294 (1999).
4. D. G. Cahill and Ph. Avouris, Appl. Phys. Lett. 60, 326 (1992).
5. K. Wurm, R. Kliese, Y. Hong, B. Rottger, Y. Wei, H. Neddermeyer, and I. S. T. Tsong, Phys. Rev. B 50, 1567 (1994).
6. J. V. Seiple and J. P. Pelz, Phys. Rev. Lett. 73, 999 (1994).
7. J. V. Seiple and J. P. Pelz, J. Vac. Sci. Technol. A 13, 772 (1995).
8. J. V. Seiple, C. Ebner, and J. P. Pelz, Phys. Rev. B 53, 15432 (1996).
9. J. C. Moore, P. H. Woodworth, J. L. Skrobiszewski, and A. A. Baski, Surf. Sci. 532-535, 711 (2003).
10. A. A. Baski, S. C. Erwin, and L. J. Whitman, Science 269, 1556 (1995).
11. A. A. Baski, S. C. Erwin, and L. J. Whitman, Surf. Sci. 392, 69 (1997).
12. J. Liu, M. Takeguchi, H. Yasuda, and K. Furuya, J. Cryst. Growth 237, 188 (2002).
13. A. A. Baski, K. M. Saoud, and K. M. Jones, Appl. Surf. Sci. 182, 216 (2001).
14. Y-N. Yang and E. D. Williams, J. Vac. Sci. Technol. A 8, 2481 (1990).