Electronic properties of thin films of laser-ablated Al 2 O 3

Applied Surface Science

Volumn 255, Issue 7, 2009, Pages 4123-4128

  Mezzasalma, A M ^a,c   Mondio, G ^a,b   Serafino, T ^b   Caridi, F ^a,c   Torrisi, L ^a,c  

^a UNIVERSITY OF MESSINA   (Italy)

^b Centro Siciliano per le Ricerche Atmosferiche e di Fisica dell'Ambiente   (Italy)

^c INFN SEZIONE DI CATANIA   (Italy)

Author keywords

AFM; Al 2 O 3; Laser ablation coupled to mass quadrupole spectrometry (LAMQS); Oxide films; Reflection electron energy loss spectroscopy (REELS)

Indexed keywords

ABLATION; ALUMINA; ALUMINUM COATINGS; ALUMINUM OXIDE; DESCALING; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY ANALYZERS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ENERGY DISSIPATION; LASER ABLATION; SPECTROMETRY; THIN FILMS;

COMPLEX DIELECTRIC FUNCTIONS; DEPOSITION ANGLE; OPTICAL ENERGY GAP; QUADRUPOLES; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; STOICHIOMETRIC RATIO; TARGET MATERIALS; X-RAY PHOTOEMISSIONS;

OXIDE FILMS;

EID: 58149087397     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.116     Document Type: Article

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