Composition of alumina films grown on Si at low temperature with catalytic CVD

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 832-835

  Ogita, Yoh Ichiro ^a   Kudoh, Tugutomo ^a   Sakamoto, Fumitaka ^b  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

^b NONE   (Japan)

Author keywords

Al2O3; Catalytic CVD; High k materials; High k MOS gates; Insulator gates; Oxide films

Indexed keywords

ALUMINA; CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS); THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CATALYTIC CVD; HIGH-K MATERIALS; HIGH-K MOS GATES; INSULATOR GATES;

OXIDE FILMS;

EID: 36749069848     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.203     Document Type: Article

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