Strain relaxation in SiGe layer during wet oxidation process

Applied Surface Science

Volumn 255, Issue 6, 2009, Pages 3701-3705

  Zhang, Yong ^a   Cai, Kunhuang ^a   Li, Cheng ^a   Chen, Songyan ^a   Lai, Hongkai ^a   Kang, Junyong ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Oxidation; Silicon germanium; Strain relaxation

Indexed keywords

DIFFUSION; DISLOCATIONS (CRYSTALS); GERMANIUM; OXIDATION; SILICA; SILICON OXIDES; STRAIN RELAXATION;

ACCUMULATION RATES; CRITICAL VALUE; DIFFUSION RATE; OXIDATION RATES; RELAXATION BEHAVIORS; SILICON GERMANIUM; SILICON SUBSTRATES; THREADING DISLOCATION;

SI-GE ALLOYS;

EID: 57849131585     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.022     Document Type: Article

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