Formation of flat, relaxed Si 1-xGe x alloys on Si(001) without buffer layers

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Hong, S ^a   Kim, H W ^a   Bae, D K ^a   Song, S C ^a   Lee, G D ^a   Yoon, E ^a   Kim, C S ^b   Foo, Y L ^c,d   Greene, J E ^c  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c University of Illinois at Urbana Champaign   (United States)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; RELAXED SIGE ALLOYS; SIO2 CAPPING LAYERS; STRAIN-INDUCED ROUGHENING;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; DIFFUSION; DISLOCATIONS (CRYSTALS); GERMANIUM; LAYERED MANUFACTURING; SILICON; SURFACE PROPERTIES;

SILICON ALLOYS;

EID: 33645520867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188043     Document Type: Article

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