Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Shimura, Takayoshi ^a   Shimizu, Michihiro ^a   Horiuchi, Shinichiro ^a   Watanabe, Heiji ^a   Yasutake, Kiyoshi ^a   Umeno, Masataka ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUKUI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); MATHEMATICAL MODELS; OXIDATION; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY;

GE CONCENTRATIONS; OXIDATION SATURATION; SHORTER OXIDATION TIME; SI1-XGEX;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33748711069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2353812     Document Type: Article

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