Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

BEC 2008 - 2008 International Biennial Baltic Electronics Conference, Proceedings of the 11th Biennial Baltic Electronics Conference

Volumn , Issue , 2008, Pages 83-86

  Razavi, Pedram ^a   Orouji, Ali A ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BARRIER LOWERING; CURRENT CHARACTERISTICS; DOUBLE GATES; DUAL MATERIAL GATES; ELECTRON EFFECTS; HIGH-K MATERIALS; MOS FETS; NANOSCALE; SHORT-CHANNEL EFFECTS; SYMMETRIC DOUBLE GATES;

MOSFET DEVICES;

EID: 57849084054     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BEC.2008.4657483     Document Type: Conference Paper

References (11)

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