Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films

Thin Solid Films

Volumn 446, Issue 2, 2004, Pages 200-204

  Zhai, Jiwei ^a   Li, X ^a   Chen, Haydn ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Antiferroelectric thin film; Electric properties (Section A); Phase transitions; Structural properties

Indexed keywords

ANTIFERROELECTRIC MATERIALS; CRYSTAL MICROSTRUCTURE; DEPOSITION; ELECTRIC FIELD EFFECTS; FREQUENCIES; HEAT TREATMENT; HYSTERESIS; PERMITTIVITY; PHASE TRANSITIONS; POLARIZATION; SILICON WAFERS; SOL-GELS; SPIN COATING;

FERROELECTRIC PHASES (FE); PHASE SWITCHING;

THIN FILMS;

EID: 0347380850     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.067     Document Type: Article

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